Chinese Physics B, Volume. 29, Issue 9, (2020)
Epitaxial synthesis and electronic properties of monolayer Pd2Se3
Fig. 1. Schematic diagrams of the fabrication process of monolayer Pd2Se3 and STM images. (a) The schematic diagram of the fabrication process. Firstly, Pd and Se atoms were deposited simultaneously with the substrate maintained at 500 K for 10 minutes (top panel). Bilayer PdSe2 was fabricated (middle panel). After annealed at selenium-deficient atmosphere, monolayer Pd2Se3 was successfully synthesized (bottom panel). (b) A large scale STM image (
Fig. 2. The atomic structure and electronic properties of monolayer Pd2Se3. (a) A high-resolution AFM image (
Fig. 3. The atomic structure of the Se vacancy in monolayer Pd2Se3. (a) and (b) The STM images (
Fig. 4. Electronic properties of Se vacancy. (a) An STM image (
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Peng Fan, Rui-Zi Zhang, Jing Qi, En Li, Guo-Jian Qian, Hui Chen, Dong-Fei Wang, Qi Zheng, Qin Wang, Xiao Lin, Yu-Yang Zhang, Shixuan Du, Hofer W A, Hong-Jun Gao. Epitaxial synthesis and electronic properties of monolayer Pd2Se3[J]. Chinese Physics B, 2020, 29(9):
Received: May. 21, 2020
Accepted: --
Published Online: Apr. 29, 2021
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