Chinese Journal of Quantum Electronics, Volume. 27, Issue 4, 474(2010)
Characteristics of SiOx film grown on 4H-SiC by thermal oxidation
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CHEN Xia-ping, ZHU Hui-li, CAI Jia-fa. Characteristics of SiOx film grown on 4H-SiC by thermal oxidation[J]. Chinese Journal of Quantum Electronics, 2010, 27(4): 474
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Received: May. 4, 2010
Accepted: --
Published Online: Aug. 10, 2010
The Author Email: Xia-ping CHEN (chenxp@xmu.edu.cn)
CSTR:32186.14.
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