Journal of Semiconductors, Volume. 46, Issue 2, 021403(2025)

Synaptic devices based on silicon carbide for neuromorphic computing

Boyu Ye1, Xiao Liu1,5、*, Chao Wu4, Wensheng Yan1, and Xiaodong Pi2,3、**
Author Affiliations
  • 1Institute of Carbon Neutrality and New Energy, School of Electronics and Information, Hangzhou Dianzi University, Hangzhou 310018, China
  • 2State key Laboratory of Silicon and Advanced Semiconductor Materials & School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
  • 3Institute of Advanced Semiconductors & Zhejiang Provincial Key Laboratory of Power Semiconductor Materials and Devices, ZJU-Hangzhou Global Scientific and Technological Innovation Center, Zhejiang University, Hangzhou 311200, China
  • 4Sorbonne Université, Faculté des Sciences, CNRS, Institut Parisien de Chimie Moléculaire (IPCM), UMR 8232, 4 Place Jussieu, 75005 Paris, France
  • 5State Key Laboratory of Polymer Materials Engineering, Sichuan University, Chengdu 610065, China
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    References(88)

    [27] T Kimoto, J A Cooper. Fundamentals of silicon carbide technology: fundamentals of silicon carbide technology(2014).

    [44] M X Bu, Y Wang, Z Y Ni et al. High-temperature optoelectronic synaptic devices based on 4H-SiC. Sci China Infor Sci, 1(2024).

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    Boyu Ye, Xiao Liu, Chao Wu, Wensheng Yan, Xiaodong Pi. Synaptic devices based on silicon carbide for neuromorphic computing[J]. Journal of Semiconductors, 2025, 46(2): 021403

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    Paper Information

    Category: Research Articles

    Received: Nov. 15, 2024

    Accepted: --

    Published Online: Mar. 28, 2025

    The Author Email: Liu Xiao (XLiu), Pi Xiaodong (XDPi)

    DOI:10.1088/1674-4926/24100020

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