Diamond as a representative of ultra-wide bandgap semiconductor material has attracted recent attention. Although some progress is made in material preparation, device development and performance, semiconductor doping technology is not resolved so far. Hydrogen-terminated (C-H) diamond is widely used in microwave power devices due to its typical two-dimensional hole gas, but it has some problems such as poor stability and high interface state concentration. In contrast, silicon-terminated (C-Si) diamond that emerged in recent years has some advantages of lower interface state density, higher threshold voltage, carrier density, and stability rather than C-H diamond. C-Si diamond electronics exhibit the enhanced properties with high threshold voltages through an unclear mechanism. This review analyzed the structure and conduction mechanism of C-H diamond, the main problems that limit its development, represented the conduction mechanism, preparation method and corresponding interface structure of C-Si diamond, and discussed the performance level of C-Si diamond MOSFETs. In addition, the existing problems in the development of C-Si diamond were also discussed, and its future development was prospected.