Chinese Journal of Quantum Electronics, Volume. 25, Issue 3, 276(2008)
Investigation of a single semiconductor quantum dot's absorption and gain properties
The density matrix approach was employed to investigate analytically the absorption/gain behavior in a semiconductor quantum dot under the strong confinement regime. The numerical results show the distribution symmetry of the gain trough and absorption crest remains the same at some different time,and the phenomena of mirror reflection occurs. However,during the evolution duration the long time absorption/gain behavior of the quantum dot system oscillates furiously and a typical interesting quantum optical phenomena of collapse-revival emergences.
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ZHAO Shun-cai, LIU Zheng-dong, LIAO Qing-bong. Investigation of a single semiconductor quantum dot's absorption and gain properties[J]. Chinese Journal of Quantum Electronics, 2008, 25(3): 276
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Received: Nov. 7, 2007
Accepted: --
Published Online: Jun. 7, 2010
The Author Email: Shun-cai ZHAO (zscnum1@126.com)
CSTR:32186.14.