Frontiers of Optoelectronics, Volume. 4, Issue 4, 462(2011)

Electroforming characteristics of SED emitter in Al-AlN granular films

Haifeng LIANG* and Wen REN
Author Affiliations
  • Key Laboratory for Optical Measurement and Thin Film of Shannxi Province, Xi’an Technological University, Xi’an 710032, China
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    The Al-AlN granular film was proposed as a cathode emitter of surface-conduction electron-emission display (SED) and the effect of Al-AlN granular films’ resistivity on electroforming in experiment and simulation methods was studied. Electroforming could be successfully completed with appropriate Al-AlN granular film resistivity between 1.98 and 15.10 mΩ$cm, and the corresponding turn-on voltage of electroforming increased from 6.2 to 10.5 V with the resistivity increasing. In addition, a temperature profile on Al-AlN emitter was simulated and the temperature decreased from middle to two sides, which were corresponding to surface morphology of Al-AlN emitter after electroforming.

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    Haifeng LIANG, Wen REN. Electroforming characteristics of SED emitter in Al-AlN granular films[J]. Frontiers of Optoelectronics, 2011, 4(4): 462

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    Paper Information

    Received: Apr. 12, 2011

    Accepted: May. 24, 2011

    Published Online: Sep. 21, 2012

    The Author Email: LIANG Haifeng (hfliang2004@163.com)

    DOI:10.1007/s12200-011-0135-z

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