Chinese Journal of Quantum Electronics, Volume. 17, Issue 5, 400(2000)

Laser Diode End-pumped Nd:YVO4 Lasers at 1342 nm

[in Chinese]1, [in Chinese]1, [in Chinese]1, [in Chinese]2, and [in Chinese]2
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  • 1[in Chinese]
  • 2[in Chinese]
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    W e report here a high efficient diode pumped Nd:YV04 laser emitting at 1342 nm. The dependence of output power and efficiency on cavity length transmittance of the output mirrors and doped density of Nd ion in YVO4 crystals was investigated,a maximum output power of 3 W was obtained.

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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Laser Diode End-pumped Nd:YVO4 Lasers at 1342 nm[J]. Chinese Journal of Quantum Electronics, 2000, 17(5): 400

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    Paper Information

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    Received: Oct. 18, 1999

    Accepted: --

    Published Online: May. 15, 2006

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