Acta Optica Sinica, Volume. 31, Issue 1, 131003(2011)
Morphology Analysis of ZnO:Ga Thin Films Deposited by Pulsed Laser Deposition
The quantitative study on the film surface morphology is important for the understanding of thin film growth mechanism. The ZnO:Ga (GZO) transparent conductive film is prepared by pulsed laser deposition (PLD). Since this GZO film growth is far from equilibrium, the GZO film has self-affine fractal characteristics and can be described by height-height correlation function H (r, r+ρ). By using atomic force microscope to get the height data of the surface image, the quantitative analysis of height-height correlation function of the GZO film prepared by PLD is carried out. The values of the three important parameters W, ξ and α are measured and it is suggested that the growth of GZO thin film is consistent with Kuromoto-Sivashinsky growth model.
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Liu Yunyan, Cheng Chuanfu, Song Hongsheng, Zang Yongli, Yang Shanying. Morphology Analysis of ZnO:Ga Thin Films Deposited by Pulsed Laser Deposition[J]. Acta Optica Sinica, 2011, 31(1): 131003
Category: Thin Films
Received: Mar. 9, 2010
Accepted: --
Published Online: Dec. 31, 2010
The Author Email: Yunyan Liu (iukener@163.com)