Laser & Optoelectronics Progress, Volume. 51, Issue 11, 110010(2014)
Investigation of III-V on Silicon Adhesively Bonded Semiconductor Lasers with Metal Confinement for Optical Interconnects
Recently, the III- V on silicon bonded lasers, as a fundamental component of complementary metal oxide semiconductor (CMOS) compatible silicon optical interconnects, have attracted great attention and been extensively studied. The metallic structure can enhance the optical confinement inside the laser resonator, increase the reflectivity at the boundary and give a large fabrication tolerance. Thus a small-volume low-powerconsumption laser can be achieved with the metallic confinement structure. The principle and experimental scheme for the III-V on silicon adhesively bonded semiconductor lasers with metal confinement are introduced, and the lasing characteristics are analyzed. Further development of hybrid laser may lay the foundation for the low-power-consumption high-bandwidth optical interconnects.
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Yang Yuede, Sui Shaoshuai, Tang Mingying, Xiao Jinlong, Du Yun, Huang Yongzhen. Investigation of III-V on Silicon Adhesively Bonded Semiconductor Lasers with Metal Confinement for Optical Interconnects[J]. Laser & Optoelectronics Progress, 2014, 51(11): 110010
Category: Reviews
Received: Apr. 9, 2014
Accepted: --
Published Online: Nov. 7, 2014
The Author Email: Yuede Yang (yyd@semi.ac.cn)