Antireflection Coatings of 1310 nm Opto-Electronic Devices with R<10<sup>-4</sup>

[in Chinese]; [in Chinese]; [in Chinese]

Acta Optica Sinica, Volume. 19, Issue 2, 235(1999)

Antireflection Coatings of 1310 nm Opto-Electronic Devices with R<10^-4

[in Chinese], [in Chinese], and [in Chinese]

Author Affiliations

[in Chinese]

show less

Abstract Get PDF(in Chinese)

The dielectric thin films deposited on compound semiconductors devices by electron cyclotron resonance (ECR) plasma chemical vapor deposition (CVD) are characterized. The method to deposite antireflectivity coatings on 1310 nm semiconductor lasers with reflectivity less than 10-4 and its advantage are discussed.

Keywords

antireflection coating laser devices of semiconductor method of ECR plasma CVD reflectivity

Tools

Get Citation

Copy Citation Text

[in Chinese], [in Chinese], [in Chinese]. Antireflection Coatings of 1310 nm Opto-Electronic Devices with R<10^-4[J]. Acta Optica Sinica, 1999, 19(2): 235

Download Citation

EndNote(RIS)BibTex Plain Text

Set citation alerts for article

Save article for my favorites

Paper Information

Category: Thin Films

Received: Sep. 27, 1997

Accepted: --

Published Online: Aug. 9, 2006

The Author Email:

DOI:

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology