Acta Optica Sinica, Volume. 12, Issue 10, 897(1992)
Temperature dependence of the near-infrared photoluminescence spectroscopies in Ga0.5In0.5P epilayer grown on GaAs substrate by MOCVD method
The near-Infrared photoluminescence spectroscopies of Ga0.5In0.5P epilayer grown on GaAs substrate by metalorganic chemical vapor deposition (MOCVD) are measured. Three photoluminegcence peaks from deep levels are observed, and their peak energies are 1.17, 0.99 and 0.85eV, respectively. We further investigate the temperature dependence of the intensity, peak position and half width of the photoluminescence bands and discuss their origins.
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[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Temperature dependence of the near-infrared photoluminescence spectroscopies in Ga0.5In0.5P epilayer grown on GaAs substrate by MOCVD method[J]. Acta Optica Sinica, 1992, 12(10): 897
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