Chinese Journal of Quantum Electronics, Volume. 27, Issue 2, 209(2010)
Temperature and intensity effect on self-deflection of Gaussian beam in an unbiased serial photorefractive crystal circuit
In order to obtain temperature and intensity effect on self-deflection of Gaussian beam in an unbiased serial photorefractive crystal circuit, assuming a Gaussian beam and a dark soliton beam are incident on the photorefractive crystal, respectively, effects of changing the temperature and intensity of dark solitons on the self-deflection of the match of Gaussian beam with one bright solitons are discussed by numerical calculation. The result shows that the bending distance of the Gauss beam centre increases with temperature rise, decreases as temperature continuously rises. All the results are useful in the engineering realization of the optical-control and thermo-control optical devices.
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YUAN Jian-fa. Temperature and intensity effect on self-deflection of Gaussian beam in an unbiased serial photorefractive crystal circuit[J]. Chinese Journal of Quantum Electronics, 2010, 27(2): 209
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Received: Apr. 13, 2009
Accepted: --
Published Online: May. 31, 2010
The Author Email: Jian-fa YUAN (yjianfa@163.com)
CSTR:32186.14.