Chinese Journal of Quantum Electronics, Volume. 17, Issue 1, 31(2000)

Modify of GaAs/AlGaAs Quantum Well by Proton Implantation and Rapid Thermal Annealing

[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], and [in Chinese]
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    In this paper we shall demonstrate the use of intermixing inmodify of GaAs/AlGaAs quantum-well. The paper shows that proton implantation can achievelarge energy shifts after standard annealing procedures. The PL and photoresponse spectrumwere measured as a function of ion dose in the range 5×1014/cm-2 to 2.5×1015/cm-2/, the peakphotoresponse wavelength was tunable between 8.4μm to 10.2μm andPL peak from 780nm to 850nm.

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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Modify of GaAs/AlGaAs Quantum Well by Proton Implantation and Rapid Thermal Annealing[J]. Chinese Journal of Quantum Electronics, 2000, 17(1): 31

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    Received: Mar. 22, 1999

    Accepted: --

    Published Online: May. 15, 2006

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