A low voltage low power active inductor (LVLPAI) is proposed. It consisted of a novel positive transconductor, a negative transconductor and a voltage conversion module. Among them, the voltage conversion module was connected to the output terminal of the negative transconductor and the input terminal of the positive transconductor. Furthermore, the PMOS transistor in the novel positive transconductor was adopted, and its gate and the substrate were tied together. In this way, the active inductor not only could operate under low voltage and but also had low power dissipation at different frequencies. Based on the 018 μm RF CMOS process, the LVLPAI was verified and compared with the conventional AI. The results indicate that for the LVLPAI and the conventional AI under three inductance values of 3 326 nH at 15 GHz, 1 403 nH at 27 GHz, and 782 nH at 44 GHz respectively, the operation voltages of the former and the latter are 08 V, 1 V 12 V and 15 V, 16 V, 17 V, so the corresponding decreases in voltage are 467%, 375%, 294% respectively. The power consumptions are 008 mW, 025 mW, 053 mW and 014 mW, 031 mW, 062 mW, so the corresponding decreases in power are 429%, 194%, 145% respectively.