Within visible lightemitting diode (LED) range, because of the the world problem of “yellow gap”, the white LED is based on yellow phosphor conversion of blue LED. However, the lighttolight conversion efficiency of the phosphor is prone to decline in the high temperature environment generated by selfheating, which leads to the problems of luminous decay and color temperature drift. Based on the breakthrough of high luminous efficiency InGaN yellow LED, our group has develop a new type of low color temperature LED light source by using high luminous efficiency red and yellow LED, which has the technical characteristics of no phosphor and no blue light. In this paper, we named it the siliconbased golden light LED. When the current density of LED is 20 A/cm2, the color temperature of 2 170 K, luminous efficiency of 156 lm/W, and color rendering index Ra of 77 is obtaiend for this siliconbased golden light LED device. When the current density of LED is 1 A/cm2, the luminous efficiency can reach 217 lm/W. This paper reports the variation of luminous efficiency and color temperature of this new type LED device with changes of input current and ambient temperature. At the same time, the spatial spectrum distribution of the device has been optimized. In addition, the hightemperature, hightemperature & highhumidity, and thermal shock reliability tests of the device have been carried out, which verified the high reliability of the siliconbased golden light LED device. Finally, this paper introduces the applications of siliconbased golden light LED devices in road lighting, tunnel lighting and other fields, as well as the promotion and application in home lighting fields such as maternal and child lighting.