A technology of the Schottky-drain (SD) combined with the field-plated structure is proposed to realize the reverse blocking applications in Si-based vertical MOSFETs. Based on this technology, two novel vertical MOSFETs, SD-VFP-MOS with a vertical field-plate (VFP) as well as SD-SFP-MOS with a slant field-plate (SFP), are proposed and investigated by two-dimensional simulations. Compared with the MOSFET with a SD (SD-MOS) and the MOSFET with a superjunction (SJ) as well as a SD (SD-SJ-MOS), the proposed SD-VFP-MOS, especially SD-SFP-MOS, exhibits a remarkable improvement of reverse breakdown voltage and nearly none influence on the on-state characteristics. Analyses associated with the distributions of the on-state current density, off-state potential, off-state current density and electric field for all the devices are performed, which reveals the inherent mechanism of the VFP and the SFP to improve the reverse blocking ability. Detailed discussions of the dependence of the reverse breakdown voltage and the field-plate efficiency on the parameters of the field-plated structures are conducted, which could be of great value to the design of SD-VFP-MOS and SD-SFP-MOS.