Chinese Optics Letters, Volume. 11, Issue s1, S10502(2013)

Black Silicon nanostructures on silicon thin films prepared by reactive ion etching

Martin Steglich, Thomas Kasebier, Ingmar Hoger, Kevin Fuchsel, Andreas Tunnermann, and Ernst-Bernhard Kley

In this letter, the application of dry etching to prepare Black Silicon nanostructures on crystalline silicon thin films on glass is described. The utilized reactive ion etching with an inductively coupled plasma (ICP-RIE) of SF6 and O2 is discussed and a remarkable increase in light absorption of about 70% is demonstrated.

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Martin Steglich, Thomas Kasebier, Ingmar Hoger, Kevin Fuchsel, Andreas Tunnermann, Ernst-Bernhard Kley. Black Silicon nanostructures on silicon thin films prepared by reactive ion etching[J]. Chinese Optics Letters, 2013, 11(s1): S10502

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Paper Information

Category: Coatings for solar cell

Received: Nov. 29, 2012

Accepted: Dec. 30, 2012

Published Online: May. 30, 2013

The Author Email:

DOI:10.3788/col201311.s10502

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