The back-lighting structure of InGaAs FPA is blocked by its InP substrate, thus it has no response to visible light. For wide spectral detection application requirements, an InGaAs FPA with the pitch of 25μm and the array size of 640×512 has been developed. After the flip chip bonding process, the thinning polishing process combining with the dry and wet methods were performed on the chip, the photodiode array chip eventually retains a thickness of about 5μm. The visible and SWIR response of 400~1700nm spectrum was realized, the peak quantum efficiency and detectivity exceed 85% and 8.0×1012cm·Hz1/2·W-1, respectively, the non-uniformity of the FPA is less than 6% and the imaging effect of the device is good.