Two-dimensional (2D) perovskite displays great potential in optoelectronic applications due to its inherent quantum well structure, large exciton binding energy and good stability. However, facile preparation of high-quality 2D perovskite films with low cost remains a huge challenge. In this work, high-quality two-dimensional perovskite (PEA)₂PbI₄ films were prepared by solution method at low annealing temperature(80 ℃) without other special treatments, and further applied in the field of photodetectors. The results show that this photodetector possessed a low dark current (10^-11 A), good responsiveness illuminated at a wavelength of 450 nm (107 mA·W^-1), high detection rate (2.05×10¹² Jones) and fast response time (250 μs/330 μs). After 1200 s continuous illumination, the device maintains 95% initial photocurrent. In addition, the photocurrent remains almost unchanged after storage for 30 d. This work provides promising strategy to develop stable and high-performance optoelectronic devices.