Laser & Optoelectronics Progress, Volume. 59, Issue 23, 2314004(2022)
Performance Optimization of Deep-Ultraviolet Laser Diodes Based on Hole Reservoir Layer
In this paper, to improve the problem of low hole injection efficiency in the active region of a deep-ultraviolet laser diode (DUV-LD), a hole reservoir layer (HRL) is introduced based on the conventional DUV-LD and the HRL is changed to a five-step HRL with a decreasing Al mole fraction from n-region to the p-region. The HRL is numerically examined using Crosslight's Lastip software, which revealed that the application of the structure can achieve a higher carrier radiation recombination rate and a lower threshold current. When a five-step HRL with decreasing Al mole fraction is located between the last quantum barrier layer of DUV-LD and the upper waveguide layer, the electron leakage is minimal and the device performance is significantly improved.
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Mengzhen Wang, Yao Wang, Shiqin Wei, Fang Wang, Zhi Quan, Yuhuai Liu. Performance Optimization of Deep-Ultraviolet Laser Diodes Based on Hole Reservoir Layer[J]. Laser & Optoelectronics Progress, 2022, 59(23): 2314004
Category: Lasers and Laser Optics
Received: Oct. 15, 2021
Accepted: Nov. 16, 2021
Published Online: Nov. 28, 2022
The Author Email: Liu Yuhuai (ieyhliu@zzu.edu.cn)