Chinese Journal of Lasers, Volume. 17, Issue 12, 711(1990)
Analysis of stationary characteristics of TS semiconductor lasers
The lateral spread current distribution of the terraced substrate semiconductor lasers is derived and a new model is put forward for analysing the stationary characteristics of TS lasers TS double heterojunction and TS large optical cavity structure are analysed and compared based on this model. The theoretical results confirm to the expe-rimental data from some published papers.
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[in Chinese], [in Chinese], [in Chinese]. Analysis of stationary characteristics of TS semiconductor lasers[J]. Chinese Journal of Lasers, 1990, 17(12): 711