Chinese Journal of Quantum Electronics, Volume. 21, Issue 5, 669(2004)
Interface effects on energy levels in semiconductor quantum dot heterostructures
Based on a spherical shell structure and the graded finite potential well model, the interface effects on the energy level shifts of bound states in a semiconductor quantum dot heterostructure were analyzed and calculated. It indicates that the interface effects are fairly significant when the quantum dots are in the strong confinement region.
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[in Chinese], [in Chinese], [in Chinese], [in Chinese]. Interface effects on energy levels in semiconductor quantum dot heterostructures[J]. Chinese Journal of Quantum Electronics, 2004, 21(5): 669