Chinese Journal of Quantum Electronics, Volume. 21, Issue 5, 669(2004)

Interface effects on energy levels in semiconductor quantum dot heterostructures

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    Based on a spherical shell structure and the graded finite potential well model, the interface effects on the energy level shifts of bound states in a semiconductor quantum dot heterostructure were analyzed and calculated. It indicates that the interface effects are fairly significant when the quantum dots are in the strong confinement region.

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    [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Interface effects on energy levels in semiconductor quantum dot heterostructures[J]. Chinese Journal of Quantum Electronics, 2004, 21(5): 669

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    Paper Information

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    Received: Jun. 5, 2003

    Accepted: --

    Published Online: May. 15, 2006

    The Author Email: (yanglig@zju.edu.cn)

    DOI:

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