Microelectronics, Volume. 53, Issue 3, 531(2023)
Study on Factors Influencing Differences of Surface Quality of Silicon Carbide Wafers
The surface morphology and quality of 150 mm SiC wafers cut by multi-wire diamond wire saw was analyzed. The surface roughness Ra of C-plane was about twice of the Si-plane by testing the surface roughness of both sides of SiC wafers, respectively. The Si-plane of wafer cut by lateral abrasive particles of multi-wire diamond wire saw was smoother with more grinding effect applied to this plane because of the wafer bending towards to the Si-plane. In addition, the damage layer depth on both sides of SiC wafer was measured by the bonded interface sectioning technique. The results show that the damage layer depth of the Si-plane is about 789 μm, significantly lower than 138 μm of the C-plane. Observed by microscope, the cross-section of Si-plane edge wafer is smoother. It is further proved that the grinding effect of lateral abrasive particles on the Si-plane is stronger due to the wafer bending, resulting in differences in surface morphology and quality on both sides of the SiC wafer.
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FAN Yuandong, LI Hui, WANG Yingming, GAO Pengcheng, WANG Lei, GAO Fei. Study on Factors Influencing Differences of Surface Quality of Silicon Carbide Wafers[J]. Microelectronics, 2023, 53(3): 531
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Received: Apr. 28, 2023
Accepted: --
Published Online: Jan. 3, 2024
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