Acta Optica Sinica, Volume. 20, Issue 1, 114(2000)
Time-Resolved Femtosecond Free-Induction-Decay in Semiconductor
Coherent properties for excitons and for free carriers in intrinsic bulk GaAs are studied with femtosecond free induction decay (FID). The GaAs at 77 K is excited at its excitonic energy with dual fs pulses from a Ti:Sapphire laser and the FID is recorded through photocurrent detection. The dephasing rates are determined by comparing the FID with theoretical results for density matrix in homogeneouse brodening two level system.
Keywords
Tools
Get Citation
Copy Citation Text
[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Time-Resolved Femtosecond Free-Induction-Decay in Semiconductor[J]. Acta Optica Sinica, 2000, 20(1): 114
Paper Information
© Copyright 2018-2021 | Chinese Laser Press.
All Rights Reserved 沪ICP备15018463号-20