High-purity chiral single-walled carbon nanotubes are of great significance for the development of next generation of carbon-based electronic devices. In this paper, PFO-BPy, PFO, and PFO-BT polymers were used to separate the (6,5), (7,5), (10,5) chiral single-walled carbon nanotubes (s-SWCNTs) with high purity and high concentration of dispersant and more than 99% of the residue was removed. High-density and high-uniformity carbon thin films were obtained by using the above deposition liquid. And then chiral s-SWCNTs field effect transistor (FET) arrays were fabricated. Experimental results indicate chiral s-SWCNTs FETs with large diameter (10,5) have better electrical properties, the mobility is up to 16cm2?V-1?s-1 and the Ion/Ioff ratio can reach 107.