Acta Optica Sinica, Volume. 20, Issue 8, 1015(2000)
Study of Bistable Characteristics of Long External Cavity Semiconductor Lasers Using Expression of Threshold Carrier Density
When a long external cavity semiconductor laser (ECLD) is tuned to oscillate at different frequencies, the optical bistabilities of ECLDs are studied by using expressions of the threshold carrier density and carrier dependent refractive index. The criterion for observing optical bistability on the P-ν curve of an ECLD has been established and the expression for the hysteresis loop width has been deduced.
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[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Study of Bistable Characteristics of Long External Cavity Semiconductor Lasers Using Expression of Threshold Carrier Density[J]. Acta Optica Sinica, 2000, 20(8): 1015