Chinese Optics Letters, Volume. 6, Issue 3, 03183(2008)
Study on hydrogen sulfide plasma passivation of 790-nm laser diode cavity surface
In order to improve the optical properties of the III-V laser diodes (LDs) by means of H2S plasma passivation technology, H2S plasma passivation treatment is performed on the GaAs(110) surface. The optimum passivation conditions obtained are 60-W radio frequency (RF) power and 20-min duration. So the laser cavity surfaces are treated under the optimum passivation conditions. Consequently, compared with unpassivated lasers with only AR/HR-coatings, the catastrophic optical damage (COD) threshold value of the passivated lasers by H2S plasma treatment is increased by 33%, which is almost the same as that of (NH4)2Sx treatment. And the life-test experiment has demonstrated that this passivation method is more stable than (NH4)2Sx solution wet-passivated treatment.
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Chunling Liu, Yanping Yao, Chunwu Wang, Xin Gao, Zhongliang Qiao, Mei Li, Yuxia Wang, Baoxue Bo. Study on hydrogen sulfide plasma passivation of 790-nm laser diode cavity surface[J]. Chinese Optics Letters, 2008, 6(3): 03183