Infrared and Laser Engineering, Volume. 47, Issue 11, 1121001(2018)

Counteracting methods of nodular growth in CVD-ZnS

Yang Deyu11、*, Yang Hai1, Li Hongwei2, Huo Chengsong1, Wei Naiguang1, Li Jianming1, Li Dongxu1, and Shi Jingjing1
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  • 1[in Chinese]
  • 2[in Chinese]
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    Chemical vapor deposition method was used to manufacture bulk ZnS materials (CVD-ZnS). Nodular growth phenomenon in bulk CVD-ZnS was studied systematically. Through the analysis of microstructure and macrostructure, some growth centers with larger size were seen as the origin of nodular cells. Growth direction of nodular cells was changed to cross direction, while growth rate of nodular cells was faster than other normal grains. All of these factors led to the spherical objects on the surface of products. A turbinate structure was observed from nodular cell in cut-plane samples as well. Meanwhile, according to the different nodular phenomena, the main mechanisms of different growth centers were discussed. The counteracting methods, based on above conclusions, were explored and confirmed through different deposited experiments. Thus, the nodular growth in CVD-ZnS could be restrained effectively.

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    Yang Deyu1, Yang Hai, Li Hongwei, Huo Chengsong, Wei Naiguang, Li Jianming, Li Dongxu, Shi Jingjing. Counteracting methods of nodular growth in CVD-ZnS[J]. Infrared and Laser Engineering, 2018, 47(11): 1121001

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    Paper Information

    Category: 先进光学材料

    Received: Jun. 10, 2018

    Accepted: Jul. 20, 2018

    Published Online: Jan. 10, 2019

    The Author Email: Deyu1 Yang (csuyangdeyu@163.com)

    DOI:10.3788/irla201847.1121001

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