We have successfully fabricated the room temperature CW InGAsP/InP separated confinement single quantum well(SQW)DC-PBH laser at 1.48 μm by liquid phase epitaxy for the first time in our country. The lowest threshold current at room temperature is 23 mA for the cavity length of 200 μm The highest CW output power is 18.8 mW per facet without mirror coating. The power saturation doesn't occur yet while the pulsed output power is higher than 50 mW. The thicknesses of active layer and transition layer in quantum well are 20 nm and 3 nm, respectively.