Spectroscopy and Spectral Analysis, Volume. 33, Issue 8, 2105(2013)
Strain in GaN Epi-Layer Grown by Hydride Vapor Phase Epitaxy
In the present paper, strain in GaN epitaxial layer grown by hydride vapor phase epitaxy (HVPE) was investigated by means of high-resolution X-ray diffraction (HRXRD), Raman spectra and photoluminescence (PL) measurements. Both the biaxial in-plane and out-of-plane strains (of the order of ~10-4 and 10-4, respectively) and the hydrostatic strain component (of the order of ~10-5) were extracted from HRXRD measurements. These values agreed well with the ones computed from the blue-shift of E2 Raman mode and the near-band-edge PL peak. The results showed that strains in GaN layer were superposed by the biaxial strain and hydrostatic strain.
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LIU Zhan-hui, XIU Xiang-qian, ZHANG Li-li, ZHANG Rong, ZHANG Ya-nan, SU Jing, XIE Zi-li, LIU Bin, SHAN Yun. Strain in GaN Epi-Layer Grown by Hydride Vapor Phase Epitaxy[J]. Spectroscopy and Spectral Analysis, 2013, 33(8): 2105
Received: Sep. 20, 2012
Accepted: --
Published Online: Aug. 12, 2013
The Author Email: Zhan-hui LIU (zhanhuiliu@gmail.com)