Sulfur doped diamond thin films have been synthesized via glow plasma assisted hot filament chemical vapor deposition (GP-CVD) using gas mixtures of methane, hydrogen, Argon and hydrogen sulfide. The stresses of the films have been studied as a function of the volume ratio of hydrogen sulfide (HzS) to methane (CH4) RSC the results show that with the increase of RSC, the total stress and intrinsic stress decrease. The total stress has the maximum 23 GPa when RSX is 4200 ppm; the intrinsic stress can balance the thermal stress and the total stress has the minimal absolute value when RSc is 6500 ppm, so the diamond thin films have good adherence on the substrates, it is good for the stabilization of the diamond growth. It can be concluded that the tensile stress and the compressive stress are mainly caused by high density of grain boundaries and impurities of sp2 carbon respectively.