Acta Optica Sinica, Volume. 31, Issue s1, 100103(2011)

Characterization of Vanadium Oxide Thin Films Annealed in N2 Atomosphere with Different Hours

Chen Liulian1,2、*, Ma Bin1, Shi Yongming1, and Zhai Houming1
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  • 1[in Chinese]
  • 2[in Chinese]
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    Annealing experiments are performed at 450 ℃ in N2 atmosphere for different time on vanadium oxide films prepared by RF magnetron sputtering. Changes in surface morphology, electrical, structural properties and chemical composition are studied. From resistance-temperature (R-T) measurement and calculation, it is found that both R and temperature coefficient of resistance (TCR) of the films are increased after annealing. From scanning electron microscope (SEM) and (AFM) atomic force microscope images, it is observed that both grain size and surface roughness are aggrandized greatly after annealing. X-ray diffraction (XRD) analysis shows that the as-sputtered film is almost amorphous while new phases V2O5(0 0 1), VO2(0 1 1, 1 -1 0) and V2O3(1 1 3) appear in the annealed films. X-ray photo-electronic spectrum (XPS) quantitative analysis indicates that the annealed films are oxidized possibly due to adsorbed oxygen to lattice oxygen transition.

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    Chen Liulian, Ma Bin, Shi Yongming, Zhai Houming. Characterization of Vanadium Oxide Thin Films Annealed in N2 Atomosphere with Different Hours[J]. Acta Optica Sinica, 2011, 31(s1): 100103

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    Paper Information

    Category: Materials

    Received: Jun. 28, 2010

    Accepted: --

    Published Online: Jun. 23, 2011

    The Author Email: Liulian Chen (陈柳炼|chenliulianhao@163.com)

    DOI:10.3788/aos201131.s100103

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