Journal of Terahertz Science and Electronic Information Technology , Volume. 21, Issue 10, 1271(2023)

Design and verification of simplified model of new second-order magnetron memristor

XIAOLi, XIONGBingjun, XIAOXianwei, YANGJian, HEJiaojiao, WANGYang, and JIN Xiangliang
Author Affiliations
  • [in Chinese]
  • show less

    The proposal of memristor theory has greatly promoted the development of chaotic systems, enriching the dynamics of chaotic circuits. The operational amplifier becomes an important part of the memory circuit model due to its powerful signal processing capacity. In this paper, a simplified operational amplifier based on low power differential pair is constructed and this operational amplifier reduces the number of required transistors to two. Then, the simulation equivalent circuit model and hardware experimental circuit of a new type of second-order magnetron memristor are created. The results show that with the increase of the excitation signal frequency, the side lobe area of the "8" decreases; with the increase of the excitation signal amplitude, the side lobe area of the "8" increases. The results of circuit simulation and hardware circuit experiments have verified the validity of the new model of magnetron memristor and the accuracy of the design method.

    Tools

    Get Citation

    Copy Citation Text

    XIAOLi, XIONGBingjun, XIAOXianwei, YANGJian, HEJiaojiao, WANGYang, JIN Xiangliang. Design and verification of simplified model of new second-order magnetron memristor[J]. Journal of Terahertz Science and Electronic Information Technology , 2023, 21(10): 1271

    Download Citation

    EndNote(RIS)BibTexPlain Text
    Save article for my favorites
    Paper Information

    Category:

    Received: Jun. 18, 2021

    Accepted: --

    Published Online: Jan. 17, 2024

    The Author Email:

    DOI:10.11805/tkyda2021259

    Topics