INFRARED, Volume. 44, Issue 1, 11(2023)
Micro-Raman Study of InSb Wafers
The micro Raman scanning test was carried out on InSb wafer before and after heat treatment. A new characterization method of stress surface distribution of InSb wafer was developed. The transverse optical (TO) phonon scattering peaks of InSb before and after heat treatment are 179.3 cm-1 and 178.5 cm-1, respectively. The longitudinal optical (LO) phonon scattering peaks of are 188.8 cm-1 and 188.7 cm-1, respectively. The half-peak widths of characteristic peaks are 5.8 cm-1 and 5.0 cm-1, respectively. The half-peak widths of X-ray dual-crystal diffraction curves are 12.10--20.04 arcsec and 7.61--7.74 arcsec, respectively. For devices made of heat-treated InSb wafers, the increment of blind element is less after baking at 80℃ for 20 days, and the overall quantity is small. This indicates that the heat treatment releases the residual stress of the wafer, which has a favorable effect on the new blind pixel in the late suppression device, and lays a material foundation for the preparation of a new generation of infrared detector with ultra-high performance and ultra-large size.
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BAI Wei, JIN Yan, LI Qian, DONG Tao, SHE Wei-lin. Micro-Raman Study of InSb Wafers[J]. INFRARED, 2023, 44(1): 11
Received: Sep. 19, 2022
Accepted: --
Published Online: Mar. 12, 2023
The Author Email: Wei BAI (nwpubaiwei@163.com)