<113> oriented silicon is used as substrate and the <113> surface is at an angle of 25.24° with <111> planes. A 36 μm period diffraction grating as a mark during the anisotropic etching of silicon was generated on <113> Si by thermal oxidation and photo-etching technology. Subsequently silicon wafers are etched in the coventional anisotropio etching solution. Continuously slanted V-groove structures on silicon have been fabricated which is used for a 36 μm groove distance blazed grating can be obtained by further reducing the groove distance.