Chinese Optics Letters, Volume. 8, Issue 8, 757(2010)
Sub-nanosecond silicon-on-insulator optical micro-ring switch with low crosstalk
We demonstrate a sub-nanosecond electro-optical switch with low crosstalk in a silicon-on-insulator (SOI) dual-coupled micro-ring embedded with p-i-n diodes. A crosstalk of -23 dB is obtained in the 20 \mu m-radius micro-ring with the well-designing asymmetric dual-coupling structure. By optimizations of the doping profiles and the fabrication processes, the sub-nanosecond switch-on/off time of <400 ps is finally realized under an electrical pre-emphasized driving signal. This compact and fast-response micro-ring switch, which can be fabricated by complementary metal oxide semiconductor (CMOS) compatible technologies, have enormous potential in optical interconnects of multicore networks-on-chip.
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Xi Xiao, Haihua Xu, Liang Zhou, Zhiyong Li, Yuntao Li, Yude Yu, Jinzhong Yu. Sub-nanosecond silicon-on-insulator optical micro-ring switch with low crosstalk[J]. Chinese Optics Letters, 2010, 8(8): 757
Received: Mar. 3, 2010
Accepted: --
Published Online: Aug. 12, 2010
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