Acta Optica Sinica, Volume. 35, Issue 12, 1204002(2015)
Theoretical Simulation Analysis the Quantum Efficiency of In0.53Ga0.47As Photodetectors
Influence of material parameters on quantum efficiency of In0.53Ga0.47As photodetector is presented. The results show that the quantum efficiency mainly depends on the direction of incident light, the carrier concentrations of P-region and N-region, and the surface recombination velocities and the thickness of each region. When light is injected from P-side, the surface recombination velocity, carrier concentration and thickness of P-region have significant impact on the quantum efficiency. The material parameters of N-region have slight impact on quantum efficiency. Under condition of high carrier concentration (n>1017 cm-3), the surface recombination velocity and thickness are major factors. When light is injected from N-side, the surface recombination velocity of N-region is the major factor of quantum efficiency, if the carrier concentration is less than 1017 cm-3; the material thickness is the major factor of quantum efficiency, if the carrier concentration is more than 10cm16 cm-3.
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Li Danni, Xu Yingtian, Xu Li, Zou Yonggang, Zhang He, Li Yang, Zhao Xin, Ma Xiaohui, Hou Linbao. Theoretical Simulation Analysis the Quantum Efficiency of In0.53Ga0.47As Photodetectors[J]. Acta Optica Sinica, 2015, 35(12): 1204002
Category: Detectors
Received: May. 12, 2015
Accepted: --
Published Online: Dec. 10, 2015
The Author Email: Danni Li (8669979@qq.com)