AlGaAs Short Wavelength Integrated Superluminescent Source

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

Acta Optica Sinica, Volume. 18, Issue 6, 789(1998)

[in Chinese]¹, [in Chinese]¹, [in Chinese]¹, [in Chinese]¹, [in Chinese]¹, [in Chinese]¹, [in Chinese]¹, [in Chinese]², [in Chinese]², [in Chinese]², and [in Chinese]²

Author Affiliations

¹[in Chinese]

²Material Research Center, Northwesten University, Evanston, IL60208-3108,U.S.A.

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Abstract Get PDF(in Chinese)

A novel semiconductor integrated source——AlGaAs short wavelength superluminescent integrated diode has been suggested and demonstrated. It uses direct coupling of the superiuminescent diode with the semiconductor amplifier. An AlGaAs SQW heterostructure wafer and gain—guide of oxide—stripe are used in the device. 57 mW superlumineseent output power with 20 nm spectal width (FWHM) are obtained. The otical gain of the amplifier in the integrated device is about 21 dB.

Keywords

integrated optical sources semiconductor amplifiers superluminescent diodes

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[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. AlGaAs Short Wavelength Integrated Superluminescent Source[J]. Acta Optica Sinica, 1998, 18(6): 789

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Paper Information

Category: Optical Devices

Received: Jan. 15, 1997

Accepted: --

Published Online: Oct. 18, 2006

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DOI:

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology