The influence of the growth temperature and interruption time on the crystal quality of AlGaInAs/AlGaAs quantum well is investigated. The AlGaInAs/AlGaAs quantum well and whole 852 nm laser structures are grown by metal organic chemical vapor deposition (MOCVD). Reflectance anisotropy spectroscopy (RAS) and photoluminescence (PL) spectra are applied to measure the AlGaInAs/AlGaAs interfaces crystalline quality. The results show that high growth temperature will lead to indium segregation from AlGaInAs quantum well to AlGaAs barrier. By lowering the growth temperature and using of interruption time between AlGaInAs quantum well and AlGaAs barriers, the indium segregation effect can be effectively suppressed. The AlGaInAs/AlGaAs quantum well shows an abrupt interface and good crystalline quality under this growth conditions. With optimizing growth conditions, whole laser structures are grown. All the epilayer and growth process can be distinguished in situ by RAS transient spectra.