Acta Optica Sinica, Volume. 29, Issue 11, 3232(2009)
Photoelectric Effects of ZnO/P-Si Heterojunction
ZnO/P-Si heterojunctions are fabricated by pulsed laser deposition of ZnO films on P-Si substrates.The substrate temperatures of 400 ℃,500 ℃,550 ℃ and 600 ℃ are taken for the ZnO film deposition.All the heterojunctions show typical rectifying behaviors and the reverse dark current increases with the substrate temperature.The sample prepared at 550 ℃ shows the best photoelectric effects.There are different I-V characteristics as the ZnO/P-Si heterojunction is exposed to visible and ultraviolet (UV) photons.The photocurrent increases rapidly in the initial several voltages,but slowly beyond a certain reverse bias voltage.When the sample is illuminated by UV photon,the photocurrents show a gradual increase with the bias.According to the transmittance spectra of the ZnO films,it is thought that the electron-hole pairs are induced in the different depletion of the heterojunction for the visible and UV photons.
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Qi Hongxia, Chen Chuanxiang. Photoelectric Effects of ZnO/P-Si Heterojunction[J]. Acta Optica Sinica, 2009, 29(11): 3232
Category: Thin Films
Received: Dec. 23, 2008
Accepted: --
Published Online: Nov. 16, 2009
The Author Email: Hongxia Qi (phyqhx@163.com)