A bandgap reference with high-order temperature compensation and built-in negative feedback voltage regulation was designed. Low temperature drift and high PSRR were achieved in the proposed bandgap reference. By using two pairs of MOS transistors working in the subthreshold region, the exponential compensation current was generated according to different operating temperature, which resulted in a high-order temperature compensation and hence reduced the temperature coefficient of the bandgap reference. Based on the output voltage of the bandgap reference, the power supply rejection capability of the bandgap reference was improved by building a negative feedback voltage regulator. Based on the Dongbu 0.18 μm BCD process, a low-temperature-coefficient and high-PSRR bandgap reference was completed. The layout area of the proposed bandgap reference was 290 μm×200 μm. The post simulation results show that the temperature coefficient is only 1.15×10-6/℃ in the temperature range of -45 ℃ to 125 ℃, and the PSRR reaches 83.22 dB. The average output voltage is 1.212 V and the line sensitivity is 0.015% in the supply range of 2.8-5.5 V.