Laser & Optoelectronics Progress, Volume. 57, Issue 11, 111430(2020)
Research Progress on Hyperdoped Silicon Photodetectors Fabricated by Femtosecond Laser
The photodetectors based on hyperdoped silicon exhibit advantages including high gain at low voltage, and broadband spectral response ranging from visible to near-infrared wavelengths. In this review, the mechanism of femtosecond laser hyperdoping is introduced, followed by the research progress on hyperdoped silicon photodetectors, especially the discussions on how to enhance device response, suppress dark current, improve lattice quality, and increase carrier mobility. Moreover, photodetectors are introduced for flexible optoelectronic applications. At last, the development prospects of photodetectors based on femtosecond laser hyperdoped silicon are forecasted.
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Xiaorong Jin, Qiang Wu, Song Huang, Zixi Jia, Guanting Song, Xu Zhou, Jianghong Yao, Jingjun Xu. Research Progress on Hyperdoped Silicon Photodetectors Fabricated by Femtosecond Laser[J]. Laser & Optoelectronics Progress, 2020, 57(11): 111430
Category: Lasers and Laser Optics
Received: Apr. 9, 2020
Accepted: May. 8, 2020
Published Online: Jun. 2, 2020
The Author Email: Wu Qiang (wuqiang@nankai.edu.cn)