Laser & Optoelectronics Progress, Volume. 59, Issue 19, 1900003(2022)
Research Progress on Ge/SiGe Multiple Quantum Well Optical Modulators
Silicon-based photonic integration technology has made breakthroughs in several fields, but the silicon germanium material system is currently the only material that can realize all silicon-based integrated active devices and is compatible with complementary metal oxide semiconductor processes. Ge/SiGe multiple quantum wells as silicon-based optical modulators can realize short-distance optical interconnections on silicon chips, and Ge/SiGe multiple quantum well modulators based on the quantum-confined Stark effect have the advantages of low power consumption, low bias voltage, and high speed. This paper summarizes the research status and progress of Ge/SiGe-based multiple quantum well modulators. The extinction ratio, optical loss, bias voltage, electric field, modulation bandwidth, dark current, and other performance parameters of Ge/SiGe multiple quantum well modulators are discussed and compared. The development direction and challenges of Ge/SiGe multiple quantum well modulators in integrated photonics are evaluated.
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Qiang Huang, Yi Zhang, Junqiang Sun, Changliang Yu, Jianfeng Gao, Peilin Jiang, Haotian Shi, Chukun Huang. Research Progress on Ge/SiGe Multiple Quantum Well Optical Modulators[J]. Laser & Optoelectronics Progress, 2022, 59(19): 1900003
Category: Reviews
Received: May. 5, 2022
Accepted: Jun. 13, 2022
Published Online: Sep. 6, 2022
The Author Email: Sun Junqiang (jqsun@mail.hust.edu.cn)