Preparation and Static Property Study of Phase Change Thin Film Ge2Sb2Te5in the Short Wavelength Region

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

Acta Optica Sinica, Volume. 16, Issue 10, 1471(1996)

Preparation and Static Property Study of Phase Change Thin Film Ge₂Sb₂Te₅in the Short Wavelength Region

[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], and [in Chinese]

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[in Chinese]

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The preparation method and stalic property of phase change optical storage Ge 2Sb 2Te 5 thin film have been analysed. After measuring its static properties, we found that the Ge 2Sb 2Te 5 film can be written and erased within 100 ns. Through multilayer design, the write/erase cycle numbers can be as high as 10 6, and the reflectivity contrast is above 15%.

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Ge 2Sb 2Te 5 thin film static property short wavelength phase change media

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[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Preparation and Static Property Study of Phase Change Thin Film Ge₂Sb₂Te₅in the Short Wavelength Region[J]. Acta Optica Sinica, 1996, 16(10): 1471

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Paper Information

Category: Thin Films

Received: Aug. 15, 1995

Accepted: --

Published Online: Dec. 4, 2006

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Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology