Optoelectronics Letters, Volume. 12, Issue 1, 5(2016)

Enhanced photoluminescence from porous silicon microcavities by rare earth doping

Di-fei SUN1, Zhen-hong JIA2、*, and Jun ZHOU3
Author Affiliations
  • 1School of Physical Science and Technology, Xinjiang University, Urumqi 830046, China
  • 2School of Information Science and Engineering, Xinjiang University, Urumqi 830046, China
  • 3Department of Physics, Ningbo University, Ningbo 315211, China
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    The photoluminescence (PL) properties of porous silicon microcavities (PSMs) in the visible range at room temperature are improved by doping the rare earth ytterbium (Yb) into PSMs prepared by the electrochemical etching method. It is observed that PSMs doped with the rare earth have an emission band around 630 nm. Compared with the single- layer porous silicon (PS) film, the PSMs doped with Yb have narrower and stronger PL spectrum.

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    SUN Di-fei, JIA Zhen-hong, ZHOU Jun. Enhanced photoluminescence from porous silicon microcavities by rare earth doping[J]. Optoelectronics Letters, 2016, 12(1): 5

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    Paper Information

    Received: Oct. 22, 2015

    Accepted: --

    Published Online: Oct. 12, 2017

    The Author Email: Zhen-hong JIA (sdfei1991@163.com)

    DOI:10.1007/s11801-016-5210-7

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