Molecular beam epitaxy conditions of resonant tunneling diode photodetector (RTD-PD) are researched. The structure of the detector with In0.53Ga0.47As absorption layer and In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As double barrier structure is designed. The growth quality of In0.52Al0.48As material under different Al flux and growth temperature is tested and the optimal growth conditions are determined through X-ray diffraction and atomic force microscope test. The growth quality of In0.53Ga0.47As material under different Ga flux is researched. As there are punctate embossments on In0.53Ga0.47As surface grown under constant temperature, the In0.53Ga0.47As material is grown under varying temperature and the punctate embossments are eliminated. Two RTD-PD samples grown under constant temperature and varying temperature are fabricated. The current-voltage and photo response test show that the sample grown under varying temperature reaches higher peak current and photo response.