Acta Optica Sinica, Volume. 17, Issue 2, 146(1997)
Experimental Study of GaAlAs/GaAs Quantum Well Structure
The GaAlAs/GaAs material with gradient refraction index separate confinement single quantum well structure has been grown by MBE method. PL spectrum, double crystal X ray diffraction and electrochemical CV profile in the sampls have been measured. The experimental results show that sample′s quality has reached requirement of design. Manufacture of laser diodes with the material has obtained preliminary result.
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[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Experimental Study of GaAlAs/GaAs Quantum Well Structure[J]. Acta Optica Sinica, 1997, 17(2): 146