Journal of Infrared and Millimeter Waves, Volume. 44, Issue 1, 90(2025)

Influence of crystal temperature on femtosecond laser induced ferroelectric domain inversion process

Tian-Xiang XU1,2, Sen WANG1,2, Jin-Yang LIN1,2, Ru-Wei ZHAO1,2, Tie-Feng XU1,2,3, and Yan SHENG1,2、*
Author Affiliations
  • 1Laboratory of Infrared Materials and Devices,Research Institute of Advanced Technologies,Ningbo University,Ningbo 315211,China
  • 2Engineering Research Center for Advanced Infrared Photoelectric Materials and Devices of Zhejiang Province,Ningbo University,Ningbo 315211,China
  • 3Ningbo Institute of Oceanography,Ningbo 315832,China
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    The near-infrared femtosecond laser induced ferroelectric domain inversion in an important method in 3D nonlinear photonic crystal fabrication. Using structures produced by this technique, a series of attractive results have been achieved in optical frequency conversion and nonlinear wavefront shaping. At present, the reported laser induced domain inversion were all implemented at room temperature. For ferroelectric crystals, it would reach the Curie point during heating, and many characterizations such as coercive field which relate to domain inversion may change seriously. However, the effect of crystal temperature on femtosecond laser induced domain inversion is undefined. In this work, the strontium barium niobate (SrxBa1-xNbO3) ferroelectric crystal with the Curie point of about 70-80 ℃ depends on component proportion of Sr and Ba was used for domain inversion. Direct near-infrared femtosecond laser writing was implemented at the temperature of 25-65 ℃. The domain inversion condition was judged based on the second-harmonic pattern in the far field. The variation tendency of threshold laser power for domain inversion depends on temperature was tested and possible reason was predicted.

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    Tian-Xiang XU, Sen WANG, Jin-Yang LIN, Ru-Wei ZHAO, Tie-Feng XU, Yan SHENG. Influence of crystal temperature on femtosecond laser induced ferroelectric domain inversion process[J]. Journal of Infrared and Millimeter Waves, 2025, 44(1): 90

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    Paper Information

    Category: Infrared Optoelectronic System and Application Technology

    Received: Jan. 30, 2024

    Accepted: --

    Published Online: Mar. 5, 2025

    The Author Email: SHENG Yan (shengyan@nbu.edu.cn)

    DOI:10.11972/j.issn.1001-9014.2025.01.012

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