Chinese Optics Letters, Volume. 2, Issue 10, 10611(2004)
Static recording characteristics of new type super-resolution near-field structure
A novel super-resolution near-field optical structure (super-RENS) with bismuth (Bi) mask layer is proposed in this paper. Static optical recording tests with and without super-RENS are carried out using a 650-nm semiconductor laser at recording powers of 14 and 7 mW with pulse duration of 100 ns. The recording marks are observed by high-resolution optical microscopy with a charge-coupled device (CCD) camera. The results show that the Bi mask layer can also concentrate energy into the center of a laser beam at low laser power similar to the traditional Sb mask layer. The results above are further confirmed by another Ar+ laser system. The third-order nonlinear response induced by the plasma oscillation at the Bi/SiN interface during laser irradiation can be used to explain the phenomenon. The calculation results are basically consistent with our experimental results.
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Feng Zhang, Wendong Xu, Yang Wang, Jinsong Wei, Fei Zhou, Xiumin Gao, Fuxi Gan. Static recording characteristics of new type super-resolution near-field structure[J]. Chinese Optics Letters, 2004, 2(10): 10611