High Power Laser and Particle Beams, Volume. 36, Issue 8, 083002(2024)

310 GHz compact receiver front-end based on Schottky diode

Jiangqiao Ding1, Qiyao Liang1, Jun Jiang2,3, Ge Liu2,3, and Yue He2,3、*
Author Affiliations
  • 1School of Electronic and Information Engineering, Nanjing University of Information Science & Technology, Nanjing 210044, China
  • 2Microsystem and Terahertz Research Center, CAEP, Chengdu 610200, China
  • 3Institute of Electronic Engineering, CAEP, Mianyang 621900, China
  • show less

    Schottky mixer is the key component of terahertz receiving system. Compared with the receiver based on SIS (superconductor-insulator-superconductor) mixer and HEB (hot-electron bolometer) mixer, the terahertz receiver system constructed on the basis of Schottky diode mixer does not rely on low-temperature accessory equipment, and it has the advantages of low cost, light weight, small volume and low power consumption. At present, the structure of terahertz receiver front-end based on Schottky diode mixer is relatively complex. To solve the problems of complex structure, low integration and high loss of terahertz receiver front-end, a 288-318 GHz sub-harmonic mixer based on Schottky diode and its local oscillation channel is proposed. Accordingly, a terahertz receiver system based on this mixer is constructed. The terahertz receiver’s local oscillation channel consists of a 75 GHz sextupler, a power amplifier integrated module and a 150 GHz frequency doubler. The integrated design of the local oscillator channel makes the receiver integration greatly improved. The overall size of the integrated module is 20 mm×20 mm×43 mm. The final test of the receiver shows that: in the bandwidth of 288-318 GHz, the double sideband conversion loss of the receiver is 5.8-9.4 dB, and the noise temperature is 1 055-1 722 K, which has good RF performance.

    Keywords
    Tools

    Get Citation

    Copy Citation Text

    Jiangqiao Ding, Qiyao Liang, Jun Jiang, Ge Liu, Yue He. 310 GHz compact receiver front-end based on Schottky diode[J]. High Power Laser and Particle Beams, 2024, 36(8): 083002

    Download Citation

    EndNote(RIS)BibTexPlain Text
    Save article for my favorites
    Paper Information

    Category:

    Received: Apr. 7, 2024

    Accepted: May. 15, 2024

    Published Online: Aug. 8, 2024

    The Author Email: He Yue (heyue1109@163.com)

    DOI:10.11884/HPLPB202436.240119

    Topics